Analytical Sciences Symposia

Activation Analysis of Arsenic-Doped Silicon Substrates Using Atom Probe Tomography (APT) and Differential Hall Effect Metrology (DHEM)

Presenting Author(s)

• 

  Kun-Lin Lin

  Materials Analysis Division, Manager
  Taiwan Semiconductor Research Institute
  Hsinchu, United States

Co-Author(s)

• YW

  Yu-Neng Wang, Master

  Taiwan Semiconductor Research Institute
  Hsinchu, United States
• TC

  Tung-Huan Chou, Master

  Taiwan Semiconductor Research Institute
  Hsinchu, United States
• YY

  Yu-Chen Yang, Master

  Taiwan Semiconductor Research Institute
  Hsinchu, United States
• YH

  Yu-Lin Huang, Master

  Taiwan Semiconductor Research Institute
  Hsinchu, United States
• CC

  Chia-He Chang, Master

  Taiwan Semiconductor Research Institute
  Hsinchu, United States