Cross-Disciplinary Symposia

A BKM by Analytical TEM to Effectively Characterize Electromigration Voids versus Grain Orientations in the Integration and Evaluation of Subtractive Ru BEOL Interconnect

Presenting Author(s)

• 

  Wayne Zhao, PhD (he/him/his)

  Senior TEM Engineer
  STRD / IBM Semiconductor / IBM Research / IBM
  Albany, NY, United States

Co-Author(s)

• YZ

  Yu Zhu (he/him/his)

  IBM
  Albany, New York, United States
• MI

  Michael Iwatake (he/him/his)

  IBM
  Albany, New York, United States
• LT

  Lukas Tierney (he/him/his)

  IBM
  Albany, New York, United States
• BG

  Brian Grzeskowiak (he/him/his)

  IBM
  Albany, New York, United States
• HZ

  Haojun Zhang (he/him/his)

  IBM
  Albany, New York, United States
• HH

  Huai Huang (he/him/his)

  IBM
  Albany, New York, United States
• CP

  Christopher Penny (he/him/his)

  IBM
  Albany, New York, United States
• KC

  Kisik Choi (he/him/his)

  IBM
  Albany, New York, United States